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Crystar® 2000 a Recrystallized Silicon Carbide (ReSiC), is a fine grained, self-bonded silicon carbide composition.
The manufacturing process includes shaping the parts by slip casting and firing the green body at a very high temperature in a protective atmosphere.
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Crystar® 2000
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| Chemical analysis |
> 99 % SiC |
| Maximum use temperature |
1600°C |
| Density |
2.70 |
| Open porosity |
15 % |
| Bending strength at 1400°C |
90 MPa |
| Coefficient of thermal expansion |
4.8 x 10 -6 / K |
| Thermal conductivity at 1000°C
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25 W / mK |
Saint-Gobain also delivers a ReSiC grade especially engineered for semiconductor applications. If you are looking for the semiconductor grade, please visit : www.crystar.com
Please contact us for more information regarding material properties and discussion of your specific application and service conditions !